/ Reactive Sputtering /

Process Description：
Based on DC magnetron sputtering, both argon (as the sputtering gas) and reactive gases (which react with target particles to form compounds) are introduced simultaneously to form the desired compound thin film on the substrate.

Gas Ratio Control：

• The ratio of argon to reactive gases must be strictly controlled.
• Excess argon, insufficient reactive gas：The resulting film becomes overly metallic, with insufficient compound formation, failing to meet the intended thin-film properties.
• Excess reactive gas, insufficient argon：A compound layer forms on the target surface (target poisoning), reducing its conductivity, causing charge buildup, and lowering sputtering efficiency.

Key Points：

• Each target material requires an optimized ratio between reactive gas and argon.
• Proper gas ratio control is essential for producing high-quality compound thin films.